unisonic technologies co., ltd ut100n03 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r502-193.h 100a, 30v n-channel power mosfet ? description the ut100n03 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) < 5.3m ? @v gs =10 v, i d =50 a * r ds(on) < 8.0m ? @v gs =4.5 v, i d =40 a ? symbol gate source drain to-220 to-220f to-252 1 to-251 1 1 1 to-263 1 dfn-8(5x6) 1 ? ordering information ordering number pin assignment lead free halogen free package 123456 7 8 packing UT100N03L-TA3-T ut100n03g-ta3-t to-220 g d s - - - - - tube ut100n03l-tf3-t ut100n03g-tf3-t to-220f g d s - - - - - tube ut100n03l-tm3-t ut100n03g-tm3-t to-251 g d s - - - - - tube ut100n03l-tn3-r ut100n03g-tn3-r to-252 g d s - - - - - tape reel ut100n03l-tnd-r ut100n03g-tnd-r to-252d g d s - - - - - tape reel ut100n03l-tq2-t ut100n03g-tq2-t to-263 g d s - - - - - tube ut100n03l-tq2-r ut100n03g-tq2-r to-263 g d s - - - - - tape reel - ut100n03g-k08-5060-r dfn-8(56) s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source
ut100n03 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-193.h ? marking to-251 / to-252 / to-252d / to-263 dfn-8(56)
ut100n03 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-193.h ? absolute maximum ratings (t c =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 100 a pulsed drain current (note 2) i dm 400 a single pulsed avalanche current (note 3) i as 35 a single pulsed avalanche energy (note 3) e as 875 mj to-220/to-263 100 to-220f 36 to-251/to-252 to-252d 50 power dissipation dfn-8(56) p d 21 w junction temperature t j +175 strong temperature t stg -55 ~ +175 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by maximum junction temperature 3. l = 0.5mh, i as = 35a, v dd = 25v, r g = 25 ? , starting t j = 25 . ? thermal data parameter symbol ratings unit to-220/to-220f to-263 62.5 to-251/to-252 to-252d 110 junction to ambient dfn-8(56) ja 40.3 (note 1, 2) /w to-220/to-263 1.5 to-220f 3.47 to-251/to-252 to-252d 3 junction to case dfn-8(56) jc 6 (note 1, 2) /w notes: 1. maximum under steady state conditions is 90 c/w. 2. surface mounted on 1" x 1" fr4 board.
ut100n03 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-193.h ? electrical characteristics (t j =25 , unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =30 v,v gs =0 v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20 v 100 na on characteristics (note2) gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 3 v v gs =10 v, i d =50 a 3.05 5.3 static drain-source on-resistance r ds(on) v gs =4.5 v, i d =40 a 4.2 8 m ? dynamic parameters (note3) input capacitance c iss 9500 output capacitance c oss 800 reverse transfer capacitance c rss v ds =15v, v gs =0v, f=1.0mhz 300 pf switching parameters (note3) total gate charge q g 50 65 gate source charge q gs 20.8 gate drain charge q gd v ds =15v, v gs =5v, i d =16a 19 nc turn-on delay time t d(on) 25.7 50 turn-on rise time t r 10 20 turn-off delay time t d(off) 128 200 turn-off fall-time t f v dd =15v, i d =1a, r gen =6 ? v gs =10 v 34 70 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =20 a,v gs =0 v 1.5 v drain-source diode forward current i s 90 a notes: 1. pulse test : pulse width < 300 s, duty cycle < 2%. 2. guaranteed by design, not s ubject to production testing.
ut100n03 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-193.h ? test circuit and waveform
ut100n03 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-193.h ? typical characteristics 50 40 30 20 10 0 01 2 345 4 3 2 1 0 0 20 40 60 80 100 v gs =10,8,6,4v v gs =3v 25 t j =125 -55 output characteristics drain current,i d (a) drain to source voltage,v ds (v) drain current,i d (a) transfer characteristics gate to source voltage,v gs (v) normalized gate-source threshold voltage,v th normalized on-resistance, r ds(on) (ohms) gate to source voltage,v gs (v) c a p a c i t a n c e , c ( p f )
ut100n03 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-193.h ? typical characteristics(cont.) drain current, i d (a) drain to source on resistance, r ds(on) (m ) drain current, i d (a) drain current, i d ( a) drain current,i d (a) source-drain current,i s (a)
ut100n03 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-193.h ? typical characteristics(cont.) 10 0 10 -1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 p dm t 1 t 2 square wave pulse duration (sec) normalized thermal transient impedanc curve d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1.r jc (t)=r(t)*r jc 2.r jc =see datasheet 3.t jm -t c =p*r jc (t) 4.duty cycle,d=t 1 /t 2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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